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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05 0.16+0.1 -0.06
0.65-0.15
+0.1
2.8 0.2
3
1.5
FEATURES
* 2.5 V drive available * Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, ID = 2.0 A)
0 to 0.1
1 2
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER 2SK3577 PACKAGE SC-96 (Mini Mold Thin Type)
1 : Gate 2 : Source 3 : Drain
Marking: XL
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
VDSS VGSS ID(DC) 30 12 3.5 14 0.2 1.25 150 -55 to +150 V V A A W W C C
Gate Body Diode Drain
ID(pulse) PT1
Note2
Total Power Dissipation (TA = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
PT2 Tch Tstg
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15938EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan
(c)
2001
2SK3577
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 24 V VGS = 4.0 V ID = 3.5 A IF = 3.5 A, VGS = 0 V TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 2.0 A VGS = 4.5 V, ID = 2.0 A VGS = 4.0 V, ID = 2.0 A VGS = 2.5 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 2.0 A VGS = 4.0 V RG = 10 0.5 1.0 1.0 4.9 50 52 68 260 60 35 28 200 80 120 3.0 0.8 1.2 0.89 63 65 91 MIN. TYP. MAX. 10 10 1.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10% VGS 90%
IG = 2 mA 50
RL VDD
VDD
PG.
90%
VDS
90% 10% 10%
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet D15938EJ1V0DS
2SK3577
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 1.5
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100
1.25
80
1
60
0.75
40
0.5
20
0.25
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
100 RDS(on) Limited (VGS = 4.5 V) ID(pulse) ID(DC) PW = 1 ms
TA - Ambient Temperature - C
ID - Drain Current - A
10
1 10 ms 0.1 Single Pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 0.01 0.1 1 10 100 100 ms 5s
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - C/W
Single Pulse Without board
100
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10
1
1m 10 m 100 m 1 PW - Pulse Width - s
Data Sheet D15938EJ1V0DS
10
100
1000
3
2SK3577
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
15 Pulsed VGS = 4.5 V
10 100 VDS = 10 V Pulsed TA = 125C 75C 25C -25C
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
4.0 V 10
ID - Drain Current - A
1 0.1 0.01 0.001 0.0001
2.5 V 5
0 0 0.2 0.4 0.6 0.8 1
0.00001 0 1 2 3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
1.5 100 VDS = 10 V ID = 1.0 mA
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VDS = 10 V Pulsed TA = -25C 25C 75C 125C
VGS(off) - Gate Cut-off Voltage - V
10
1
1
0.1
0.5 -50 0 50 100 150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
110 100 90 80 70 60 50 40 30 -50 0 50 100 150 4.0 V 4.5 V ID = 2.0 A Pulsed VGS = 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
100 Pulsed 90 80 70 60 50 40 30 20 0 2 4 6 8 10 12 ID = 2.0 A
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
Data Sheet D15938EJ1V0DS
4
2SK3577
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
110 100 90 80 70 60 50 40 30 0.01 75C 25C -25C VGS = 2.5V Pulsed TA = 125C
110 100 90 80 70 75C 60 25C 50 -25C 40 30 0.01 TA = 125C VGS = 4.0 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
110 VGS = 4.5 V Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
90 80 70 60 50 40 30 0.01 TA = 125C 75C 25C -25C
Ciss, Coss, Crss - Capacitance - pF
100
VGS = 0 V f = 1 MHz
Ciss
100
Coss Crss
10
0.1 1 10 100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed
td(on), tr, td(off), tf - Switching Time - ns
tr
ISD - Diode Forward Current - A
VDD = 10 V VGS = 4.0 V RG = 10
10
tf 100 td(off) td(on)
1
VGS = 0 V
0.1
10 0.1 1 10
0.01 0.4 0.6 0.8 1 1.2 1.4
ID - Drain Current - A
Data Sheet D15938EJ1V0DS
VSD - Source to Drain Voltage - V
5
2SK3577
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
6 ID = 3.5 A
VGS - Gate to Drain Voltage - A
5 4 3 2 1 0 0
VDD = 24 V 15 V 6V
1
2
3
4
QG - Gate Charge - nC
6
Data Sheet D15938EJ1V0DS
2SK3577
[MEMO]
Data Sheet D15938EJ1V0DS
7
2SK3577
* The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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